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Composite Transistors
XN04502 (XN4502)
Silicon NPN epitaxial planar type
Unit: mm
For general amplification Features
* Two elements incorporated into one package * Reduction of the mounting area and assembly cost by one half
4
2.90+0.20 -0.05 1.90.1 (0.95) (0.95) 5 6
0.16+0.10 -0.06
1.50+0.25 -0.05
2.8+0.2 -0.3
3
2
1
0.30+0.10 -0.05
Basic Part Number
* 2SD0602A (2SD602A) x 2
0.50+0.10 -0.05 10
1.1+0.2 -0.1
0.650.15
Absolute Maximum Ratings Ta = 25C
Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current Peak collector current Total power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC ICP PT Tj Tstg Rating 60 50 5 0.5 1 300 150 -55 to +150 Unit V V V A A mW C C
Tr2
1: Collector (Tr1) 2: Base (Tr2) 3: Emitter (Tr2) EIAJ : SC-74
0 to 0.1
Marking Symbol: 5Q Internal Connection
4 5 6
1.1+0.3 -0.1
4: Collector (Tr2) 5: Base (Tr1) 6: Emitter (Tr1) Mini6-G1 Package
Tr1
3
2
1
Electrical Characteristics Ta = 25C 3C
Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector-base cutoff current (Emitter open) Forward current transfer ratio Symbol VCBO VCEO VEBO ICBO hFE1 hFE2 Collector-emitter saturation voltage Transition frequency Collector output capacitance (Common base, input open circuited) fT Cob
*
Conditions IC = 10 A, IE = 0 IC = 2 mA, IB = 0 IE = 10 A, IC = 0 VCB = 20 V, IE = 0 VCE = 10 V, IC = 150 mA VCE = 10 V, IC = 500 mA IC = 300 mA, IB = 30 mA VCB = 10 V, IE = -50 mA, f = 200 MHz VCB = 10 V, IE = 0, f = 1 MHz
Min 60 50 5
Typ
Max
Unit V V V A V MHz pF
0.1 85 40 0.35 200 6 15 0.60 340
VCE(sat)
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. *: Pulse measurement
Note) The part number in the parenthesis shows conventional part number.
Publication date: August 2003 SJJ00076BED
0.40.2
5
1
XN04502
PT Ta
500
800 700
IC VCE
Ta = 25C IB = 10 mA 9 mA 8 mA 7 mA 6 mA 5 mA 4 mA 400 300 200 100 3 mA 2 mA 1 mA
800 700
IC I B
VCE = 10 V Ta = 25C
Total power dissipation PT (mW)
400
Collector current IC (mA)
600 500
Collector current IC (mA)
600 500 400 300 200 100 0
300
200
100
0
0
40
80
120
160
0
0
4
8
12
16
20
0
2
4
6
8
10
Ambient temperature Ta (C)
Collector-emitter voltage VCE (V)
Base current IB (mA)
VCE(sat) IC
Collector-emitter saturation voltage VCE(sat) (V)
102
VBE(sat) IC
102
hFE IC
300 VCE = 10 V
Base-emitter saturation voltage VBE(sat) (V)
IC / IB = 10
IC / IB = 10
Forward current transfer ratio hFE
250 Ta = 75C 200 25C -25C
10
10
25C 1
1 Ta = 75C 10-1 25C -25C
Ta = -25C 75C
150
100
10-1
50
10-2 10-2
10-1
1
10
10-2 10-2
10-1
1
10
0 10-2
10-1
1
10
Collector current IC (A)
Collector current IC (A)
Collector current IC (A)
fT I E
Collector output capacitance C (pF) (Common base, input open circuited) ob
240 VCB = 10 V Ta = 25C
Cob VCB
12
VCER RBE
120
Transition frequency fT (MHz)
200
Collector-emitter voltage (V) (Resistor between B and E) VCER
10
f = 1 MHz IE = 0 Ta = 25C
IC = 2 mA Ta = 25C 100
160
8
80
120
6
60
80
4
40
40
2
20
0 -1
-10
-102
0
0
1 10 102
1
10
102
103
Emitter current IE (A)
Collector-base voltage VCB (V)
Base-emitter resistance RBE (k)
2
SJJ00076BED
Request for your special attention and precautions in using the technical information and semiconductors described in this material
(1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. (2) The technical information described in this material is limited to showing representative characteristics and applied circuits examples of the products. It neither warrants non-infringement of intellectual property right or any other rights owned by our company or a third party, nor grants any license. (3) We are not liable for the infringement of rights owned by a third party arising out of the use of the product or technologies as described in this material. (4) The products described in this material are intended to be used for standard applications or general electronic equipment (such as office equipment, communications equipment, measuring instruments and household appliances). Consult our sales staff in advance for information on the following applications: * Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body. * Any applications other than the standard applications intended. (5) The products and product specifications described in this material are subject to change without notice for modification and/or improvement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifications satisfy your requirements. (6) When designing your equipment, comply with the guaranteed values, in particular those of maximum rating, the range of operating power supply voltage, and heat radiation characteristics. Otherwise, we will not be liable for any defect which may arise later in your equipment. Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products. (7) When using products for which damp-proof packing is required, observe the conditions (including shelf life and amount of time let standing of unsealed items) agreed upon when specification sheets are individually exchanged. (8) This material may be not reprinted or reproduced whether wholly or partially, without the prior written permission of Matsushita Electric Industrial Co., Ltd.
2002 JUL

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